Gone are the days when Infineon and Qimonda developed and produced dynamic random access memory in Germany as it got particularly unprofitable to build commodity memory in Europe. However, ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness of just 30 nm, including top and bottom electrodes. Using scandium-doped ...